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  copyright & copy;2000 shindengen electric mfg.co.ltd ratings shindengen outline dimensions unit : mm case : fto-220 5a npn 2sC5241 fx series switching power transistor absolute maximum ratings item symbol conditions ratings unit storage temperature tstg -55 1 50 junction temperature tj 1 50 collector to base voltage v cbo 600 v collector to emitter voltage v ceo 450 v v cex v eb = 5v 600 emitter to base voltage v ebo 7v collector current dc i c 5a collector current peak i cp 1 0 base current dc i b 2 a base current peak i bp 4 total transistor dissipation p t 30 w dielectric strength vdis terminals to case, ac 1 minute 2 kv mounting torque tor (recommended torque) 0.5(0.3) n ? m electrical characteristics (tc=25 ) item symbol conditions ratings unit collector to emitter sustaining voltage v ceo (sus) i c = 0. 1 a min 450 v collector cutoff current i cbo rated v cbo max 0. 1 ma i ceo rated v ceo max 0. 1 emitter cutoff current i ebo rated v ebo max 0. 1 ma dc current gain h fe v ce = 5v, i c = 2.5a min 1 0 h fel v ce = 5v, i c = 1 ma min 5 collector to emitter saturation voltage v ce (sat) i c = 2.5a max 1 .0 v base to emitter saturation voltage v be (sat) i b = 0.5a max 1 .5 v thermal resistance jc junction to case max 4. 1 6 /w transition frequency f t v ce = 1 0v, i c = 0.5a std 20 mhz turn on time ton i c = 2.5a max 0.5 storage time ts i b 1 = 0.5a, i b2 = 1 a max 2.0 s fall time tf r l = 60 , v bb2 = 4v max 0.2
h fe - i c 1 10 100 2sC5241 0.001 0.01 0.1 1 10 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 v ce = 5v 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 tc = 150 c 100 c 50 c 25 c 0 c - 25 c - 55 c collector current i c [a] dc current gain h fe
0 0.5 1 1.5 2 2.5 3 2sC5241 0.01 0.1 1 0 0.5 1 1.5 2 2.5 3 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 i c = 0.5a 1.25a 2.5a 5a 10a tc = 25 c saturation voltage i c = 0.5a 1.25a 2.5a 5a 10a 4 base current i b [a] collector-emitter voltage v ce [v] base-emitter voltage v be [v]
0.01 0.1 1 0 1 2 3 4 5 2sC5241 i b1 = 0.2i c i b2 = 0.4i c v bb2 = 4v v cc = 150v tc = 25 c t s t on t f switching time - i c collector current i c [a] switching time t sw [ m s]
0.01 0.1 1 0 50 100 150 200 250 300 2sC5241 i c = 2.5a i b1 = 0.5a i b2 = 1.0a v bb2 = 4v tc = 25 c t s t on t f switching time - v cc collector voltage v cc [v] switching time t sw [ m s]
0.01 0.1 1 0 50 100 150 2sC5241 i c = 2.5a i b1 = 0.5a i b2 = 1.0a v bb2 = 4v r l = 60 w t s t on t f switching time - tc case temperature tc [ c] switching time t sw [ m s]
0.01 0.1 1 0 1 2 3 4 5 2sC5241 i b1 = 0.2i c i b2 = 0.4i c v bb2 = 4v v ce (clamp) = 300v tc = 25 c t s t f + t vs t f l-load switching time - i c switching time t sw [ m s] collector current i c [a]
0.01 0.1 1 0 1 2 3 4 5 2sC5241 i b1 = 0.2i c i b2 = 0.4i c v bb2 = 4v v ce (clamp) = 300v tc = 100 c t s t f + t vs t f l-load switching time - i c (at high temperature) switching time t sw [ m s] collector current i c [a]
transient thermal impedance 0.01 0.1 1 10 2sC5241 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 time t [s] transient thermal impedance q jc(t) [ c/w]
forward bias soa 0.01 0.1 1 10 1 10 100 2sC5241 50 m s tc = 25 c single pulse 150 m s 1ms 10ms dc 450 collector-emitter voltage v ce [v] collector current i c [a] p t limit i s/b limit
0 20 40 60 80 100 0 50 100 150 2sC5241 collector current derating collector current derating [%] v ce = fixed p t limit i s/b limit case temperature tc [ c]
0 2 4 6 8 10 0 100 200 300 400 500 600 2sC5241 i b1 = 0.3i c i b2 = 1.5a v bb2 = 5v tc < 150 c reverse bias soa collector-emitter voltage v ce [v] collector current i c [a]


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